14 June 2000 Pulsed laser deposition of phosphor nitride thin films
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Proceedings Volume 4148, Optoelectronic and Hybrid Optical/Digital Systems for Image and Signal Processing; (2000) https://doi.org/10.1117/12.388454
Event: International Workshop on Optoelectronic and Hybrid Optical/Digital Systems for Image/Signal Processing, 1999, Lviv, Ukraine
Abstract
In this paper we report on the results of experimental investigations of processes of pulse laser reactive deposition and structure formation and characteristics of AlN, AlN:Mn, GaN, GaN:Zn, GaN:Mn, GaN:Cr, MgSiN2:Ti, SrSiN2:Eu thin films which have been condensed from laser erosion plasma into reactive atmosphere (nitrogen).
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Bohdan K. Kotlyarchuk, Dmytro I. Popovych, "Pulsed laser deposition of phosphor nitride thin films", Proc. SPIE 4148, Optoelectronic and Hybrid Optical/Digital Systems for Image and Signal Processing, (14 June 2000); doi: 10.1117/12.388454; https://doi.org/10.1117/12.388454
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