30 January 2001 Influence of laser-induced centers on oxygen precipitation in silicon
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Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413757
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation
Abstract
In this work the kinetics of heterogeneous precipitation of silicon oxide in silicon is investigated. Laser induced centers act as nuclei for precipitates. Laser induced centers were formed in a near surface layer during pulsed laser annealing by double frequency of a Nd+3:YAG laser without introduction of any additional impurities. It is shown, that the process of formation and growth of precipitates in the presence of laser induced centers differs from the case of homogeneous. The dependence of the concentration of oxidation stacking faults on thermal treatment duration is given. The thickness of the layer with inhomogeneous distribution of oxidation stacking faults grows with thermal treatment duration in an inert ambient. This growth can be explained by the drift of oxygen atoms in the direction of the gradient of tensile internal stresses, which increases in silicon during the growth of silicon oxide precipitates.
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Juris Blums, "Influence of laser-induced centers on oxygen precipitation in silicon", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413757; https://doi.org/10.1117/12.413757
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