30 January 2001 Intracavity processing of semiconductor monocrystalline surface
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Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413759
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation
Abstract
In this work there is described the improved construction of laser cavity which makes possible to form submicron periodic structures on the surface of such perspective but not high- reflective materials as semiconductor single-crystals. The experimental investigation of the intracavity processing of the pure single-crystalline surface of germanium and silicon by means of 1.06-micrometer radiation of neodymium glass laser shows that 0.3-micrometer width periodic structures may be formed even on the surfaces with the reflection coefficient lower than 40 percent.
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Nikolai S. Kazak, Vladimir P. Osipov, Vasily V. Valyavko, "Intracavity processing of semiconductor monocrystalline surface", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413759; https://doi.org/10.1117/12.413759
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