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30 January 2001 Laser-pulse-induced chemical reactions and surface patterning in Co-Si and Co-Ti-Si films: investigations by x-ray diffraction and atomic force microscopy
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Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413758
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation
Abstract
X-ray diffraction patterns reflected from the laser treated crystalline CoSi2 layer, the measurements of surface electrical resistance and atomic force microscopy micrographs confirm the 'generation-diffusion-deformational instabilities' model of formation of defect ordered structures of various types. The CO2 laser induced decrease of the thermal coefficient of resistance to zero in Co-Ti-Si films is realized. X-ray diffraction studies of the treated films confirm that the obtained (alpha) changes with number of laser pulses are caused due to solid phase reaction Co + 2Si equals CoSi2 and 5Ti + 3Si equals Ti5Si3.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maris Knite, Leonids Shebanov, and Valentinas J. Snitka "Laser-pulse-induced chemical reactions and surface patterning in Co-Si and Co-Ti-Si films: investigations by x-ray diffraction and atomic force microscopy", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); https://doi.org/10.1117/12.413758
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