30 January 2001 Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon
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Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413776
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation
Abstract
Crystal 4—< liquid phase transitions induced in monocrystalline silicon surface layers by pulsed irradiation of a ruby laser have been studied using in situ methods and also by numerical modeling the laser - induced thermal processes. Hydrodynamic phenomena and convective heat transfer from the liquid surface absorbing laser radiation to the melt-crystal interface are possible at the melting stage. During epitaxial crystallization, the undercooling of liquid Si at <1 1 1< crystal growth direction is '-15 K more than the same for <100< and <1 10< directions. Two kinetics regimes characterize the epitaxial process to various directions. This regimes differ not only in undercooling, but also in morphology of the liquidsolid interface which can be atomically smooth or rough.
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Gennadii D. Ivlev, Elena I. Gatskevich, Dmitrii N. Sharaev, "Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413776; https://doi.org/10.1117/12.413776
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