Translator Disclaimer
9 February 2001 Hybrid long-wavelength IR sensor based on a linear array of poly Si-Ge uncooled microbolometers with a CMOS readout
Author Affiliations +
Abstract
12 An IR sensor based on a linear array of poly Si-Ge bolometers is presented. The bolometers are surface micromachined devices employing a suspended structure to achieve thermal insulation from the substrate. Linear arrays of 64 elements have been connected to the readout chip by means of a ceramic substrate realizing a hybrid sensor. The CMOS readout chip provides a pulsed bias for the bolometers, amplification of the signal and multiplexes the output in an analog line. At room temperature an NETD of 300mK has been achieved, while the maximum readout speed is 1kHz.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Spyros Kavadias, Piet De Moor, Martin Gastal, Niki Hendrikx, Filip Wirix, and Chris A. Van Hoof "Hybrid long-wavelength IR sensor based on a linear array of poly Si-Ge uncooled microbolometers with a CMOS readout", Proc. SPIE 4169, Sensors, Systems, and Next-Generation Satellites IV, (9 February 2001); https://doi.org/10.1117/12.417122
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

High-Tc superconducting infrared bolometric detector
Proceedings of SPIE (March 01 1991)
Limitations to room-temperature IR imaging systems
Proceedings of SPIE (November 01 1993)
160 x 128 uncooled FPA performance review
Proceedings of SPIE (July 26 1999)
Linear HgCdTe Radiometer
Proceedings of SPIE (September 20 1989)
Novel concepts for low-cost IR security sensors
Proceedings of SPIE (May 31 2005)

Back to Top