Application of a silicon-enriched nitride diaphragm to a condenser microphone

Norisato Shimizu; Akihisa Yoshida; Masaharu Ikeda; Shinichiro Aoki

doi:10.1117/12.396448

25 August 2000 Application of a silicon-enriched nitride diaphragm to a condenser microphone

Norisato Shimizu, Akihisa Yoshida, Masaharu Ikeda, Shinichiro Aoki

Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396448
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

LSI process compatible materials are important in the MEMS field. To add on MEMS fabrication processes after circuit fabrication, it is necessary the process temperature must be kept less than about 350 degrees C. The stress control of the film is also important for actual devices. The individual silicon enriched nitride (SEN) film has been developed, and the film properties have been clarified. The deposition temperature of SEN film is 250 degrees C, and that temperature is enough low to perform deposition process after LSI fabrication. The stress of SEN film is proportional to H₂ gas flow, and it can be controlled from tensile stress of 30 MPa to compressive stress of 360 MPa. It is thought that the SEN film stress depends on the hydrogen content. The deposition rate and buffered HF etching rate also depend on H₂ gas flow. From the RBS analysis, the composition ratio of Si/N is about 2.1. The SEN film is adopted to a condenser microphone. The membrane profile is well controlled by using tensile stressed SEN film. The sensitivity of fabricated microphone increased 0.5 mV/Pa in the half area diaphragm. The noise level is also improved over 12 dB_SPL.

Citation Download Citation

Norisato Shimizu, Akihisa Yoshida, Masaharu Ikeda, and Shinichiro Aoki "Application of a silicon-enriched nitride diaphragm to a condenser microphone", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396448

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