25 August 2000 Bulk micromachining of SOI wafers using double-sided lithography and anisotropic wet etching
Author Affiliations +
Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396469
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
A novel method of manufacturing bulk micromachined components in SOI material with anisotropic wet etching is presented. The SOI material reduces the total chip size compared to standard bulk micromachining since the slopes are shorter. It also adds functionality to the components, such as inherent overload protection and squeezed air-film damping. The method is based on double sided lithography and anisotropic wet etch of the thin device layer of the SOI wafer. The lithography on the back of the buried oxide is carried out either by electro deposition of the photoresist PEPR 2400 or by spraying ma-P 215S. A highly symmetric three-axis accelerometer has successfully been manufactured in a 50 micrometers thick SOI film.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henrik Rodjegard, Henrik Rodjegard, Gert I. Andersson, Gert I. Andersson, } "Bulk micromachining of SOI wafers using double-sided lithography and anisotropic wet etching", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396469; https://doi.org/10.1117/12.396469
PROCEEDINGS
11 PAGES


SHARE
Back to Top