25 August 2000 Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal
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Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000); doi: 10.1117/12.396423
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
In this work the etching of different Si-oxide, Si-nitride and metal layers in HF:H2O 24.5:75.5, BHF:glycerol 2:1 and vapor HF is studied and compared. The vapor HF etching is done in a commercially available system for wafer cleaning, that was adapted according to custom specifications to enable stiction-free surface micro- machining. The etch rates as a function of etching method, time and temperature are determined. Moreover, the influence of internal and external parameters on the HF vapor etching process are analyzed before choosing the standard HF vapor etch technique used for comparing the etching behavior of the different films.
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Ann Witvrouw, Bert Du Bois, Piet De Moor, Agnes Verbist, Chris A. Van Hoof, Hugo Bender, Christiaan Baert, "Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396423; https://doi.org/10.1117/12.396423
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KEYWORDS
HF etching

Etching

Oxides

Vapor etching

Metals

Semiconducting wafers

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