25 August 2000 Development of TMAH anisotropic etching manufacturing process for MEMS
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Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396424
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
An investigation on the influence of etchant concentration, dissolving silicon content and additives during silicon anisotropic etching in TMAH has been carried out. Based on the Taguchi method, the etch rates of Si, Al, and SiO2 were measured via under-etch experiments using the wagon- wheel mask pattern. The improvement on the surface quality was observed by agitating solution under ultrasonic vibration in TMAH solutions with additives. Furthermore, a new approach is developed to reduce wet etching time and to control etched gap depth between the released micro membrane and the silicon substrate. This method employs a polysilicon or an amorphous silicon thin layer embedded between the micro membrane and silicon substrate as a sacrificial layer, then this layer would be fast iso tropically etched away by TMAH solution.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiunn-Jye Tsaur, Jiunn-Jye Tsaur, Shih-I Yang, Shih-I Yang, Chen-Hsun Du, Chen-Hsun Du, Zhongshen Lin, Zhongshen Lin, Cheng-Tang Huang, Cheng-Tang Huang, Cheng-Kuo Lee, Cheng-Kuo Lee, } "Development of TMAH anisotropic etching manufacturing process for MEMS", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396424; https://doi.org/10.1117/12.396424

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