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25 August 2000 Development of a low-stress silicon-rich silicon nitride film for micromachined sensor applications
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Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396464
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
Wet etch processes are important for the production of MEMS devices. Sacrificial oxides are often used to help define polysilicon structures, and these films are often etched using solutions containing hydrofluoric acid. One important consideration is the use of an etch stop which is resistant to HF. In this study, a silicon-rich silicon nitride film was developed for this purpose. Process parameters such as DCS:NH3 ratio, pressure and temperature have ben varied in order to create a film that has a low wet etch rate, good cross-wafer and cross-load uniformity, and low conductivity for good isolation resistance. The film is also designed to have a low tensile stress, which should minimize etch rate and also minimize wafer curvature, which is beneficial for subsequent photo steps. Finally, film characterization using the index of refraction as the primary process control is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Williams, Jeff Smith, Judy Mark, George Matamis, and Bishnu P. Gogoi "Development of a low-stress silicon-rich silicon nitride film for micromachined sensor applications", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396464
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