25 August 2000 Low-temperature piezoelectric aluminum nitride thin film
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Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396425
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
AlN films were deposited on Si(100), and Al/SiO2/Si substrates by reactive Direct Current (DC) magnetron sputtering of an Al target, under different conditions of substrate temperature, pressure, N2/N2 + Ar ratio. The film properties were investigated by X-ray Diffraction, scanning electron microscopy and atomic force microscopy. Deposition rates in the range of 1.2 to 1.8 micrometers /h were obtained, the film grain size was around 40nm. To fabricate test structures, wet chemical etching was developed to etch AlN with a good selectivity respect to Al and Si. Visual aspect and surface roughness show that the maximum temperature must be less than 300 degrees C. X-ray diffraction together with dielectric constant measurement show that films are better oriented on Si(100) than on Al/Si(100).
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurie Valbin, Laure Sevely, Serge Spirkovitch, "Low-temperature piezoelectric aluminum nitride thin film", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396425; https://doi.org/10.1117/12.396425
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