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25 August 2000 Patterning of diamond films by RIE and its MEMS applications
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Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000)
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
CVD diamond film is an attractive potential material for microelectronics and MEMS application, but patterning of diamond is one of the main difficulties hindering diamond electronics. In this paper, we studied the RIE process for precise patterning of diamond films. Ni/Cr, Cu/Cu or NiTi films were used as maskants, oxygen as reactive gas. The etching results showed that the NiTi film has high etching selectivity when used as mask for diamond etching and its is very convenient to be patterned by the special developed chemical etchant. Using O2 as main etching gas, the RIE can etch the diamond film effectively. The process parameters such as RF power, vacuum pressure have marked influence on the etching rate and the patterning of diamond film has been defined. Combined with sacrifice layer process and electroplating through mask technique, diamond micro hinge has been fabricated on silicon wafer.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guifu Ding, Jinyuan Yao, Aibin Yu, Xiaolin Zhao, Li Wang, and Tianhui Shen "Patterning of diamond films by RIE and its MEMS applications", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000);


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