Paper
11 August 2000 Development of a high-performance SOI-fabricated gyroscope
S. Rajendran, Kim Miao Liew, Yee Chong Loke, Ai Qun Liu
Author Affiliations +
Proceedings Volume 4175, Materials and Device Characterization in Micromachining III; (2000) https://doi.org/10.1117/12.395603
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
Although vibrating microgyroscopes has been an active area of research in the last few years, the resolution requirements for high performance applications have not yet been met. This paper reports the development of a high performance comb-driven vibratory angular rate gyroscope. The gyroscope uses a rotary electrostatic actuation and differential capacitive sensing. The calculations show a resolution of about 8 deg/hr. The gyroscope is fabricated using SOI wafer with a 40 (mu) m thick layer of single-crystal silicon. The overall size of the gyroscope is about 2.8 mm diameter. The high sensitivity of the present design is achieved by employing a large sensing area couled with a higher layer thickness. Simply increasing the sensor area without increasing the layer thickness may yield a higher sensitivity, but lead to problems such as stiction and lower pull-in voltages. Increasing the suspension stiffness increases the pull-in voltage. However, an increase in suspension stiffness may also also increase the natural frequencies which will lower the sensitivity and resolution. The design of the gyroscope involves complex and often conflicting requirements, and some of these important aspects are discussed in this paper.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Rajendran, Kim Miao Liew, Yee Chong Loke, and Ai Qun Liu "Development of a high-performance SOI-fabricated gyroscope", Proc. SPIE 4175, Materials and Device Characterization in Micromachining III, (11 August 2000); https://doi.org/10.1117/12.395603
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KEYWORDS
Gyroscopes

Finite element methods

Photomasks

Semiconducting wafers

Sensors

Capacitance

Microelectromechanical systems

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