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11 August 2000 Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy
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Proceedings Volume 4175, Materials and Device Characterization in Micromachining III; (2000) https://doi.org/10.1117/12.395600
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
In this paper, the capabilities and problems if micro-Raman spectroscopy are discussed for measuring local mechanical stress, both in mono- crystalline and poly-crystalline silicon microstructures. The possibilities of this technique are demonstrated for two different MEMS: the crystalline Si membrane of a pressure sensor and a poly-crystalline Si beam. For both MEMS, an auto-focus Raman system was used. The stress in the membrane of the pressure sensor was investigated before and after bonding of the Si wafer containing the sensors to a glass substrate. This bonding resulted in an under-pressure in the sensor, deflecting the membrane inwardly. Raman spectra were measured from the top surface and the bottom surface of the membrane. This resulted in a map of the stress distribution. It indicates, for the top surface, tensile stress near the edges, compressive stress in the center, and hardly any stress at the corners. The stress in the poly-crystalline Si beam was measured using two different wavelengths of the laser beam. The results show a local tensile stress distribution along the length of the beam.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Merlijn van Spengen, Ingrid De Wolf, and Roy Knechtel "Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy", Proc. SPIE 4175, Materials and Device Characterization in Micromachining III, (11 August 2000); https://doi.org/10.1117/12.395600
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