Paper
18 August 2000 Advanced lithography kits: serifs and hammerhead
Hang-Yip Liu, Steffen F. Schulze, Alan C. Thomas, Anne E. McGuire, Michael Cross
Author Affiliations +
Abstract
Resolution enhancement techniques and higher NA exposure are employed to meet the lithography requirements imposed by aggressive shrinks to chip feature sizes. For certain critical levels, like storage and isolation patterning of DRAM devices, the capability to exactly reproduce the mask layout is limited. Severe corner rounding and line image shortening can occur. Such phenomena can be significant contributors to side effects like current leakage, inadequate retention time, stress, and perhaps yield loss. Our development work has shown that the use of Serif and Hammerhead structures can improve resolution printing. Moreover, better process latitude and CD control can be achieved. This paper gives an overview of these innovative techniques. It includes the consideration of different design layouts based on simulations, as well as mask making limitations e.g. mask inspection capability. The benefits of these techniques are discussed and illustrated with detailed lithographic performance data and SEM pictures.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hang-Yip Liu, Steffen F. Schulze, Alan C. Thomas, Anne E. McGuire, and Michael Cross "Advanced lithography kits: serifs and hammerhead", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395715
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KEYWORDS
Lithography

Photomasks

Inspection

Mask making

Optical lithography

Printing

Resolution enhancement technologies

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