18 August 2000 Evaluation of Schottky contact parameters in MSM-photodiode structures
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The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodiode structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions the I-V measurements can be used as a fast and simple method to evaluate the barrier height, saturation current density and junction ideal factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanislav V. Averine, Stanislav V. Averine, Yuen Chuen Chan, Yuen Chuen Chan, Yee Loy Lam, Yee Loy Lam, } "Evaluation of Schottky contact parameters in MSM-photodiode structures", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395733; https://doi.org/10.1117/12.395733


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