18 August 2000 Feasibility of very low k1(=0.31) KrF lithography
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Abstract
We observed the feasibility of very low k1(equals0.31) lithography for DRAM device using currently available high NA KrF scanner. Well-known resolution enhancement techniques (RET) such as off- axis illumination (OAI) and attenuated phase shifting mask were used in combination to define critical DRAM cell patterns of 0.11micrometers half pitch design rule device with 0.7NA KrF scanner. Strong OAI illumination source was applied to further enhance the image contrast up to the required level for patterning. Very large iso-dense bias and narrow depth of focus (DOF) of isolated features which define usable DOF(UDOF) are emerging critical issues to be solved except the very fundamental lens aberrations. Combined problems of large I-D bias and narrow UDOF could be solved by applying selective bias and assistant line patterns to isolated line. Optical proximity correction rules; selective bias and assist pattern, were generated from simulated and empirical experiments. This technology might be considered as one of the alternatives that need to fill the time and design rule gap between 0.13micrometers with KrF and sub-0.10micrometers with ArF. KrF lithography technology of 0.31k1 can be extended to ArF generation and contribute to the extension of 'optics forever' scenario.
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Insung Kim, Byeongsoo Kim, Junghyun Lee, Hanku Cho, Joo-Tae Moon, "Feasibility of very low k1(=0.31) KrF lithography", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395744; https://doi.org/10.1117/12.395744
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