IN the present work are investigated the current-volt characteristics of the symmetric n+(a-Si:H)-i(a-Si:H)- n+(a-Si:H), n+(a-Si:H)-i(a-Si1-xGex:H)- n+(a-Si:H)-structures, where i-a-Si1-xGex:H is x equals 0.57, Eg equals 1.35 eV, and n+(a-Si:H)-i(a-Si1-xGex:H)- n+(a-Si:H)-structures with varyband i(a-Si1-xGex:H) layer, where Eg of the layer varied from Eg(a-Si:H) equals 1.75 eV up to Eg(a-SixGex:H) equals 1.35eV. The varyband layer in n+-i-n+- structure creates the internal built-in field Ebuiltequals (Delta) (Epsilon) c/(q*(Delta) x), which is the additional internal built-in potential for the electrons Ebuilt equals 0.32 eV. Additional increase of the electrical field, for the account Ebuilt, in varyband layers results in increase of the currents. It corresponds to more increase of injected current in the varyband structure in comparison with non varyband at V > 0.15 Volt. In the field of voltage V > 0.5-1.0 Volt the dependence J-Vm for all n+-i-n+-structures is executed, so for the symmetric structure m equals 2.8, for the varyband structure at the direct displacement m equals 3.6 and at return m equals 1.3.