Paper
18 August 2000 Investigations on the impacts of misalignment in the integration of 0.18-μ multilevel interconnect
Teck Jung Tang, Juan Boon Tan, Sajan R. Marokkey, Tae Jong Lee, Alan Cuthbertson
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Abstract
As technology continues to shrink with tighter design rules, it becomes inevitable for the integrated process to demand a more stringent control over the in-line parameters. For multilevel interconnect, each processing step in the formation of every layer of via plug and metal interconnect impacts the overall performance and yield of the silicon wafer. The control of the process thus becomes even more challenging as more layers of interconnect are required to meet the speed performance and density requirements.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teck Jung Tang, Juan Boon Tan, Sajan R. Marokkey, Tae Jong Lee, and Alan Cuthbertson "Investigations on the impacts of misalignment in the integration of 0.18-μ multilevel interconnect", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395716
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KEYWORDS
Process control

Metals

Semiconducting wafers

Silicon

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