18 August 2000 MEEF measurement and model verification for 0.3-k1 lithography
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Abstract
The concept of Mask Error Enhancement Factor (MEEF) is introduced its impact on the future of semiconductor fabrication is explained. The effects of numerical aperture, print bias, and exposure conditions of MEEF are explored using both theoretical and experimental methods.
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Colin R. Parker, Colin R. Parker, Michael T. Reilly, Michael T. Reilly, } "MEEF measurement and model verification for 0.3-k1 lithography", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395749; https://doi.org/10.1117/12.395749
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