18 August 2000 MEEF measurement and model verification for 0.3-k1 lithography
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The concept of Mask Error Enhancement Factor (MEEF) is introduced its impact on the future of semiconductor fabrication is explained. The effects of numerical aperture, print bias, and exposure conditions of MEEF are explored using both theoretical and experimental methods.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Colin R. Parker, Michael T. Reilly, "MEEF measurement and model verification for 0.3-k1 lithography", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395749; https://doi.org/10.1117/12.395749


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