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23 August 2000 Maturity assessment of 300-mm etch equipment
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Oxide and dielectric etch, polysilicon etch, and metal etch, in situ strip and stand-alone ash processes for 300mm wafers were developed on a tool ste in SEMICONDUCTOR300 and tested for robustness using a 0.25(mu) 64Mb DRAM device. The process recipes were developed from reference scaled-up recipes. The oxide and dielectric etch tools used magnetically-enhanced reactive ion etching. They polysilicon etch tool chambers were high density plasma configurations. The metal etch tools used high-density plasma chambers and have an in-line resist strip module to prevent corrosion. Stand-alone ash tools were used for all other photoresist strip processes. For each application, at least two 300mm tools from different suppliers were tested. This paper discusses process and tool interactions affecting operational robustness and stability. Process and hardware evaluations were also done during extensibility testing using smaller linewidth features.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl E. Mautz and Thomas Morgenstern "Maturity assessment of 300-mm etch equipment", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000);

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