23 August 2000 Technique of electrical beam treatment leading to an accurate and reliable critical dimension metrology measurement on a postetch layer
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Proceedings Volume 4182, Process Control and Diagnostics; (2000); doi: 10.1117/12.410064
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States
Abstract
Accurate and reliable CD measurement is one of the most important goals of CD metrology. Today, most CD measurements are performed utilizing the SEM. One of the most commonly employed measurement detection algorithms is the Threshold method. This method is most useful for measuring CD when the structure begin measured consistently produces stable peaks in the secondary electron induced image intensity profile. However, the intensity profile becomes more complicated when there are multiple peaks whose peak heights are neither stable nor fixed in position. In this case, accurate and reliable CD measurements are difficult to achieve. In this paper, a novel technique of pre-dose and re-dose electrical beam treatment will be described. The technique is effective in producing reliable intensity profiles resulting in accurate CD measurements, and the recipe developed using the technique runs fully automated. The technique has been applied in our factory with success.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary X. Cao, Nancy J. Wheeler, Alan S. Wong, "Technique of electrical beam treatment leading to an accurate and reliable critical dimension metrology measurement on a postetch layer", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410064; https://doi.org/10.1117/12.410064
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KEYWORDS
Critical dimension metrology

Scanning electron microscopy

Detection and tracking algorithms

Image processing

Lithium

Interfaces

Metrology

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