17 April 2001 Phase transition dynamics on semiconductor surface at light pulse irradiation
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Proceedings Volume 4183, 24th International Congress on High-Speed Photography and Photonics; (2001) https://doi.org/10.1117/12.424321
Event: 24th International Congress on High-Speed Photography and Photonics, 2000, Sendai, Japan
Abstract
In this work the dynamics of anisotropic local melting of monocrystalline and implanted silicon at different regimes of light pulse irradiation was investigated. The results of in situ investigation of local melting of monocrystalline silicon were carried out for the first time using special long-focus microscope and high-speed camera. The time dependences of the density and sizes of local molten regions were systematically measured. We explain the increasing of the size of LMRs during short time by the superheating of the semiconductor in the solid state with respect to the equilibrium melting point. Due to superheating conditions are arisen to overcome the barrier for the formation of the liquid phase nuclei. The dynamics of anisotropic local melting of implanted silicon was investigated using several optical methods and special diffraction gratings. The intensity of diffraction picture depends on the contrast of this periodical structure, i.e. from difference of crystalline and amorphous fragments of gratings. The dynamics of diffraction effectivity during and after the power light pulse was registered using high-speed camera. Three qualitative stages: solid-state recrystallization, local melting and liquid-phase recrystallization were observed experimentally.
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Yakh'ya V. Fattakhov, Mansur F. Galyautdinov, Tat'yana N. L'vova, Il'dus B. Khaibullin, "Phase transition dynamics on semiconductor surface at light pulse irradiation", Proc. SPIE 4183, 24th International Congress on High-Speed Photography and Photonics, (17 April 2001); doi: 10.1117/12.424321; https://doi.org/10.1117/12.424321
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