25 January 2001 Amorphous silicon crystallization by a long-pulse excimer laser
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Proceedings Volume 4184, XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference; (2001) https://doi.org/10.1117/12.413991
Event: XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, 2000, Florence, Italy
Abstract
In this paper we summarise the results of the annealing of a-Si films done at ENEA Frascati by the XeC1 laser facility Hercules and the preliminary results of the characterisation work done on the first Italian industrial high-energy excimer laser, named Hercules L. Some information will be also given on a novel process to obtain homogeneous, large grain poly-Si and on a new homogeniser with zoom.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paolo Di Lazzaro, Paolo Di Lazzaro, Sarah Bollanti, Sarah Bollanti, Francesca Bonfigli, Francesca Bonfigli, Francesco Flora, Francesco Flora, Gualtiero Giordano, Gualtiero Giordano, Tommaso Letardi, Tommaso Letardi, Daniele Murra, Daniele Murra, Cheng En Zheng, Cheng En Zheng, Alessandro Baldesi, Alessandro Baldesi, } "Amorphous silicon crystallization by a long-pulse excimer laser", Proc. SPIE 4184, XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (25 January 2001); doi: 10.1117/12.413991; https://doi.org/10.1117/12.413991
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