22 January 2001 Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication
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Abstract
Chemically amplified resists are sought that have optimum performance at 257 nm while providing the post-coat and post-exposure stability required for mask fabrication. An acetal based resist, AZ DX1100 (Clariant), was explored due to its post-coat and post exposure delay stability. A photodestructable base is present in the resist to capture acid that transported into unexposed regions and to minimize the effects of environmental base contamination. Lithography simulation was used to simulate the acetal resist process at 257 nm. These simulations demonstrated some of the effects of standing waves and resist absorption. Reflectivity simulations were conducted to evaluate the influence of the photomask substrate on standing waves. Bake optimization experiments (PAB/ PEB) were performed to establish conditions that minimize standing wave effects while maximizing the resist sidewall angle. Acetal resists are low activation energy systems that deprotect at room temperature. The time scale and extent of the deprotection reaction at room temperature was quantified over the time frame (hours) required for typical mask writing strategies. The deprotection reaction was measured indirectly by monitoring the resist thickness change using a development rate monitor (DRM). This analysis provides insight into the amount of deprotection that occurs at room temperature and during the post-exposure bake.
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Benjamen M. Rathsack, Cyrus Emil Tabery, Jeff A. Albelo, Peter D. Buck, C. Grant Willson, "Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410739; https://doi.org/10.1117/12.410739
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