22 January 2001 Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction
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Abstract
DUV scanner (4x) gate CD control was evaluated and compared with that of DUV stepper (5x) under the concept of total process proximity based correction (TPPC), merging all the process step error correction from mask fabrication to wafer etch process. We found that different iso-dense bias should be applied in the case of scanner. This is mainly caused by different optical proximity effect (DI-mask CD), that is, scanner shows nearly constant optical proximity effect regardless of the size of pattern CD while that of stepper is strongly dependent upon the size of pattern CD. Application of the concept of TPPC in DUV scanner enabled us to control FI CD within specification. A correction rule table was experimentally obtained using TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.
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Byung-Ho Nam, Byung-Ho Nam, Dong-Seok Kim, Dong-Seok Kim, Byung-Jin Cho, Byung-Jin Cho, Nam-Ki Seok, Nam-Ki Seok, Jae Kwan Jeong, Jae Kwan Jeong, Sang-Pye Kim, Sang-Pye Kim, Sang-Woo Kang, Sang-Woo Kang, Young Ju Hwang, Young Ju Hwang, Young Jin Song, Young Jin Song, } "Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410760; https://doi.org/10.1117/12.410760
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