Translator Disclaimer
22 January 2001 Cr absorber mask for extreme-ultraviolet lithography
Author Affiliations +
A Cr film is one of the attractive materials that have been evaluated as an absorber in the advanced mask development for the extreme ultraviolet lithography (EUVL). The EUV absorber material needs to meet the requirement in EUV absorbance, mask process, inspection, repair and others. Two EUV masks were fabricated in a research laboratory and tested on a lOx reduction EUV exposure system. The processes of fabricating these two masks started with an 8-inch silicon wafer blank that had the Mo/Si multilayer (ML). A Cr film was selected as an absorber for both masks. A Si02 film, served as a buffer layer, was applied to one of the masks. The mask patterning was carried on a conventional I-line exposure tool following plasma dry etch for pattern transfer. The functionality of the two masks was tested in a resist image printing. This paper reports the EUV mask fabrication process and discusses the two different approaches to fabricate an EUV mask. 80 nm resist image features were resolved on a lOx reduction EUV exposure system by using these two masks.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guojing Zhang, Pei-yang Yan, and Ted Liang "Cr absorber mask for extreme-ultraviolet lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001);


Integration of antireflection coatings on EUV absorber stacks
Proceedings of SPIE (December 27 2002)
EUV mask fabrication with Cr absorber
Proceedings of SPIE (July 21 2000)
Inspection and repair of EUV
Proceedings of SPIE (March 11 2002)
Masks for extreme ultraviolet lithography
Proceedings of SPIE (December 18 1998)
Mask technology for EUV lithography
Proceedings of SPIE (April 23 1999)

Back to Top