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22 January 2001 Defect dispositioning using mask printability on attenuated phase-shift production photomasks
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Abstract
This paper examines the effects of mask printability of various OPC defect types on a MoSi APSM mask using an MSM-100 AIMS tool operating at 248nm as a printability prediction tool. Printability analysis will be used to address differences in intensity, image capture wavelength, defocus, defect size, type, and placement on two substrate materials. Defect correlation to photomask CD error, aerial image intensity error, and MEEF on high-end KrF photomasks will also be studied.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Justin W. Novak, Benjamin George Eynon Jr., Eric Poortinga, Anja Rosenbusch, and Yair Eran "Defect dispositioning using mask printability on attenuated phase-shift production photomasks", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410771
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