22 January 2001 Defect printability modeling of smoothed substrate defects for EUV lithography
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In Extreme Ultraviolet (EUV) lithography, sub-resolution reticle substrate defects which are overcoated during the multilayer coating process could introduce proximity phase errors. A strategy for mitigating this problem is to coat the substrate with a smoothing layer prior to ML deposition. A spherical defect will be reduced to a low aspect Gaussian bump. In order to understand the smoothing requirements necessary to render a defect non-critical, we have utilized a simplified 3-D lithographic modeling approach to study the effect of a Gaussian bump in proximity to both 70 nm 1:3 L/S and 35 nm 1:3 L/S printed with a 0.1 and 0.25 numerical aperture system, respectively. The results quantify that the smoothing approach can be successfully used to render a defect non-critical by two means: 1) reducing the defect volume or 2) by reducing the slope of the Gaussian bump.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avijit K. Ray-Chaudhuri, Avijit K. Ray-Chaudhuri, Aaron Fisher, Aaron Fisher, Eric M. Gullikson, Eric M. Gullikson, } "Defect printability modeling of smoothed substrate defects for EUV lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410676; https://doi.org/10.1117/12.410676


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