Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japamn 2000 Best Presentation Award)

Hideki Suda; Hideaki Mitsui; Osamu Nozawa; Hitoshi Ohtsuka; Megumi Takeuchi; Naoki Nishida; Yasushi Okubo; Masao Ushida

doi:10.1117/12.410773

22 January 2001 Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award)

Hideki Suda, Hideaki Mitsui, Osamu Nozawa, Hitoshi Ohtsuka, Megumi Takeuchi, Naoki Nishida, Yasushi Okubo, Masao Ushida

Author Affiliations +

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410773
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

The halftone phase-shift mask (HtPSM) has been in practical use for i-line and KrF lithography. In ArF lithography, the HtPSM is also considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We in HOYA have attempted to expand the applicability of our MoSi-based HtPSM blank technology to ArF lithography, helping extend the life of the existing infrastructure for conventional HtPSM fabrication. We have completed tuning our new MoSi-based film for ArF application. The film’s optical properties, chemical durability and ArF laser irradiation durability meet industry requirements; and it is compatible with conventional mask-making processes and repair techniques for the KrF HtPSM.

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Hideki Suda, Hideaki Mitsui, Osamu Nozawa, Hitoshi Ohtsuka, Megumi Takeuchi, Naoki Nishida, Yasushi Okubo, and Masao Ushida "Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award)", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410773

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