Development of photomask fabrication for 100-nm design rule

Takashi Inoue; Takuro Horibe; Akihiro Maeda; Yoshiyuki Tanaka

doi:10.1117/12.410766

22 January 2001 Development of photomask fabrication for 100-nm design rule

Takashi Inoue, Takuro Horibe, Akihiro Maeda, Yoshiyuki Tanaka

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410766
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

130-100nm rule lithography has rendered the mask error enhancement factor (MEF) larger and required photomasks to have tight CD accuracy. We adopted the current best photomask technology to meet lOOnm-design rule. We used a negative CAR resist, the 50kV EB machine, a new puddle development using the NS (No impact Stream) nozzle, and NLD(neutral loop discharge) dry etching. Consequently, we obtained the best performance in the full scanner area and we achieved the target CD uniformity.

Citation Download Citation

Takashi Inoue, Takuro Horibe, Akihiro Maeda, and Yoshiyuki Tanaka "Development of photomask fabrication for 100-nm design rule", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410766

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