In low k1 lithography, reticle quality decides the process capability. Therefore, we must minimize CD errors on the reticle plate. Double Step process (DS process) is a unique method to improve CD uniformity of line patterns on the active region of poly layer reticle. In DS process, poly layer design is divided into the active region and the non-active region. And then, these two regions are processed individually. By using this procedure, pattern density variation across the reticle plate is reduced when making line patterns on the active region. As a result, the loading effect of the dry etching process reduced, and CD uniformity of these patterns can be improved. Using this technique of reticle fabrication, CD uniformity could be improved. Particularly, the range of CD variation of line patterns in logic cells was drastically reduced from 29nm to 20nm.