22 January 2001 Dry etching technology of Cr and MoSi layers using high-density plasma source
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Abstract
We have manufactured dry etcher system for photomask process utilized the new plasma source and process optimizations have been done for CD (critical dimension) uniformity and loading effects. The 3 ? of CD uniformity(final CD - develop CD, point by point subtraction) of Cr pattern, with 132 x 132 mm2 area and 11 x 11 pattern arrays, was obtained below 10 nm, where the target CD is 0.8 um clear pattern. Cr and MoSi slopes are 88° ~ 90° , which shows highly anisotropic etch. The selectivity of PR to Cr was over 1.6 at the clear area ratios of < 50 % and the selectivity was mainly affected by oxygen partial pressure and clear area ratio. Phase uniformity for PSM was 180 ± 1° and transmittance uniformity is within 6.3 ± 0.02 %. Validity and probability of dry etcher system to produce next generation photomask were discussed.
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Hyuk-Joo Kwon, Hyuk-Joo Kwon, Kwang-Sik Oh, Kwang-Sik Oh, Byung-Soo Chang, Byung-Soo Chang, Boo-Yeon Choi, Boo-Yeon Choi, Kyung-Ho Park, Kyung-Ho Park, Soo-Hong Jeong, Soo-Hong Jeong, } "Dry etching technology of Cr and MoSi layers using high-density plasma source", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410733; https://doi.org/10.1117/12.410733
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