22 January 2001 Effect of beam blur in mask fabrication
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Abstract
Proposed high throughput electron beam systems require a large current, which intrinsically degrades the image quality due to Coulomb interaction effect. For that reason, the maximum achievable beam current is determined by the resolution required. Considerable efforts have been devoted to determine the beam blurs in electron beam systems. However, since measurement of the beam blur is highly difficult, we suggest three beam blur measurement methods in this paper: using process latitude, SEM resist figures and dot mark scan data. Although the results from these three methods do not agree exactly, it is possible to estimate beam blur, 90 nm 120 ran in mask writing system, EBM-3000 (Toshiba).
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Seung-Hune Yang, Seung-Hune Yang, Won-Tai Ki, Won-Tai Ki, Seong-Yong Moon, Seong-Yong Moon, Tae Moon Jeong, Tae Moon Jeong, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, Jung-Min Sohn, Jung-Min Sohn, } "Effect of beam blur in mask fabrication", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410725; https://doi.org/10.1117/12.410725
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