22 January 2001 Evaluation of loading effect of NLD dry etching: II
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Abstract
The dry etching process by using NLD (Neutral Loop Discharge Plasma) has been evaluated. The loading effect was measured applying the CAR (Chemically Amplified Resist) negative resist process in the low pressure etching condition, where an excellent CD (Critical Dimension) uniformity was obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana, "Evaluation of loading effect of NLD dry etching: II", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410736; https://doi.org/10.1117/12.410736
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