22 January 2001 Evaluation of loading effect of NLD dry etching: II
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Abstract
The dry etching process by using NLD (Neutral Loop Discharge Plasma) has been evaluated. The loading effect was measured applying the CAR (Chemically Amplified Resist) negative resist process in the low pressure etching condition, where an excellent CD (Critical Dimension) uniformity was obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuya Fujisawa, Tatsuya Fujisawa, Takayuki Iwamatsu, Takayuki Iwamatsu, Koji Hiruta, Koji Hiruta, Hiroaki Morimoto, Hiroaki Morimoto, Noriyuki Harashima, Noriyuki Harashima, Takaei Sasaki, Takaei Sasaki, Mutsumi Hara, Mutsumi Hara, Kazuhide Yamashiro, Kazuhide Yamashiro, Yasushi Okubo, Yasushi Okubo, Yoichi Takehana, Yoichi Takehana, } "Evaluation of loading effect of NLD dry etching: II", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410736; https://doi.org/10.1117/12.410736
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