22 January 2001 Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm
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Abstract
A possibility of chemically amplified resist (CAR) process for mask production has been studied experimentally to solve the low throughput problem with a high voltage variable shaped e-beam system. The pattern fidelity of CAR for small patterns like serifs and scattering bars is comparable to the ZEP7000 resist that is the most popular e-beam resist nowadays. We estimated the amount of delay effect in vacuum that can be generated during a long writing time in the vacuum state. And it proved that critical dimension (CD) change occurred with an acetal type resist rather than an acrylate type resist. The effect of temperature fluctuation during post exposure baking (PEB) was also evaluated by measuring line-widths and line- width variations across the mask plate. Through our work, we have achieved CD non-uniformity of < 10nm in ?3 within 135 X 135 mm2 field showing a high possibility for CAR process to be applied to the mask production for device generations beyond 180nm.
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Chang-Hwan Kim, Chan-Uk Jeon, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn, "Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410764; https://doi.org/10.1117/12.410764
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