22 January 2001 Improved process control of photomask fabrication in e-beam lithography
Author Affiliations +
Abstract
In mask-making process with e-beam lithography, the process stabilization can be evaluated by looking at the fluctuation of critical dimension (CD) uniformity, mean to target(MTT), and defect controllability. Among them, the capability of CD uniformity and mean to target depends strongly on the acceleration voltage of an exposure machine. Generally, a high acceleration voltage has advantages on dose latitude, pattern fidelity and CD linearity due to its small forward scattering range. Therefore, those merits using a high acceleration voltage can provide a higher yield for production photomask. In this paper, we have examined the CD uniformity and the MTT capability for production photomask fabrication in order to compare the process stabilization between 50 keV and 10 keV. By choosing a 50 keV exposure, significant improvements can be made in CD uniformity and MTT capability.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byung-Cheol Cha, Byung-Cheol Cha, Jin-Hong Park, Jin-Hong Park, Yo-Han Choi, Yo-Han Choi, Jin-Min Kim, Jin-Min Kim, Woo-Sung Han, Woo-Sung Han, Hee-Sun Yoon, Hee-Sun Yoon, Jung-Min Sohn, Jung-Min Sohn, } "Improved process control of photomask fabrication in e-beam lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410730; https://doi.org/10.1117/12.410730
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT

A novel method to quantify the complex mask patterns
Proceedings of SPIE (March 08 2016)
Smart mask ship to control for enhanced on wafer CD...
Proceedings of SPIE (October 20 2016)
Advanced CD control technologies for EB mask writer
Proceedings of SPIE (December 06 2004)
Measurement error revisited
Proceedings of SPIE (December 30 1999)

Back to Top