22 January 2001 Investigations of CD variation in Cr dry etching process
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In this report, origins of CD error caused through Cr dry etching were investigated and some process conditions were evaluated for the advanced reticle productions. It is shown that resist patterns of ZEP-7000 written with MEBES-4500 showed a little CD deviation between the sparse and dense regions. These errors could be easily emphasized after Cr dry etching. Some dry etching conditions were examined and improvements were confirmed after the addition of etching assist gas and adequate intensity of AC magnetic field of MERIE (Magnetically Enhanced Reactive Ion Etching) system. It is also shown that resist profiles after development play important role in the CD distribution after dry etching for the reticle contained both sparse and dense region on the same plate. With our conventional condition, resist profile of ZEP-7000 showed a gentle slope after development. It is proved that this lower pattern contrast makes the Cr CD difference due to pattern loading much worse. Minimum CD error could be obtained through the process that made resist profile almost vertical. These results imply that total adjustments, not only for dry etching conditions but also for resist process that gives us the highest pattern contrast, are needed to solve the complex issues for the advanced CD control.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hitoshi Handa, Hitoshi Handa, Satoshi Yamauchi, Satoshi Yamauchi, Kouji Hosono, Kouji Hosono, Hisatsugu Shirai, Hisatsugu Shirai, } "Investigations of CD variation in Cr dry etching process", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410731; https://doi.org/10.1117/12.410731


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