22 January 2001 Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks
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Improving microprocessor speed, design and density are mainly determined by the minimum feature size that can be imaged on the wafer [1]. On the other hand, the latter is limited by the optics, the lithographic wavelength and the process used. Phase shift photomasks were introduced to extend the usefulness of any optical lithographic generation [2,3]. As smaller feature sizes are required by the IC industry, the use of phase shift masks is expected to increase for a specific stepper generation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Dieu, Laurent Dieu, Peter F. Carcia, Peter F. Carcia, Hideaki Mitsui, Hideaki Mitsui, Kunihiko Ueno, Kunihiko Ueno, } "Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410762; https://doi.org/10.1117/12.410762

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