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22 January 2001 KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process
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Abstract
We investigated KrF attenuated PSM defect printability for 120nm node actual DRAM lithography process. A programmed defect mask was fabricated for the experiment, which contains three different background pattern layers of isolation, bit lines, and bit line contact holes of the 120nm DRAM device. Various types and sizes of MoSi defects such as extensions, intrusions, dots, and holes were programmed on those background patterns. We used a high NA DUV scanner and high contrast resist for wafer printing test. Based on the experimental results, we defined the non-printable defect sizes of MoSi defects and evaluated the detection capabilities of i-line inspection tools for those printable defects. In addition, we tested repair performance of current tools by comparing the process windows of defect patterns between pre-repair and post-repair.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juhwan Kim, Sang-Chul Kim, Hee-Chun Kim, Sang-Lee Lee, Yong-Kyoo Choi, Young-Mog Ham, and Oscar Han "KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410705
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