22 January 2001 Lithographic performance results for a new 50-kV electron-beam mask writer
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Current pattern generation tool designs will be inadequate to meet the advanced requirements for next-generation masks, particularly at the 100 nm node. Etec Systems, Inc. has developed a complete raster-based patterning solution to provide improved resolution, critical dimension (CD) uniformity, positional accuracy, and throughput. This solution meets the challenges of the 130-nm device generation with extendibility to at least 100 nm devices. Our complete patterning solution includes an electron-beam (e-beam) pattern generation system and a new 50 kV process. The e-beam system includes a column with 50 kV accelerating voltage and a new graybeam writing technique. To accomplish this technique, a pulse-width modulated blanking system, per-pixel deflection, retrograde scanning, and multiphase and multipass writing are used. This combination of features results in markedly improved lithographic performance and enables the use of conventional high-contrast resists for faster process implementation. Additional significant innovations of this pattern generation system include a novel stage design, an integrated automated material handling system (AMHS), on-board diagnostics, and improved environmental/thermal management. We believe this comprehensive patterning solution offers the best combination of benefits to the user in terms of versatility and extendibility.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Varoujan Chakarian, Varoujan Chakarian, Stephen R. Bylciw, Stephen R. Bylciw, Charles A. Sauer, Charles A. Sauer, David Trost, David Trost, Marek Zywno, Marek Zywno, Robin Teitzel, Robin Teitzel, Frederick Raymond, Frederick Raymond, Frank E. Abboud, Frank E. Abboud, } "Lithographic performance results for a new 50-kV electron-beam mask writer", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410672; https://doi.org/10.1117/12.410672

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