Paper
22 January 2001 Localized resist heating due to electron-beam patterning during photomask fabrication
Alexander C. Wei, William A. Beckman, Roxann L. Engelstad, John W. Mitchell, Thanh N. Phung, Jun-Fei Zheng
Author Affiliations +
Abstract
Localized resist heating effects that occur during electron beam (e-beam) patterning of optical masks can lead to critical dimension (CD) errors. These errors are due to unexpected resist development or underdevelopment, which is related to the temperature history of the resist. Eliminating this source of error requires a knowledge of the localized temperature history and how resist properties are impacted by elevated temperatures. Computer simulations of electron beam patterning of an optical mask can address the temperature history of the localized heating not possible through experimentation. Presented are the results of a study to determine the feasibility of using finite element (FE) analysis to predict these thermal effects. Two models were created to demonstrate its capabilities. The first shows that FE modeling is capable of high spatial resolution temperature profiles. The second demonstrates that FE models can be programmed to run complete patterning simulations.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander C. Wei, William A. Beckman, Roxann L. Engelstad, John W. Mitchell, Thanh N. Phung, and Jun-Fei Zheng "Localized resist heating due to electron-beam patterning during photomask fabrication", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410727
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electron beam lithography

Picosecond phenomena

Photomasks

Optical lithography

Diffusion

Critical dimension metrology

Spatial resolution

Back to Top