22 January 2001 Localized resist heating due to electron-beam patterning during photomask fabrication
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Localized resist heating effects that occur during electron beam (e-beam) patterning of optical masks can lead to critical dimension (CD) errors. These errors are due to unexpected resist development or underdevelopment, which is related to the temperature history of the resist. Eliminating this source of error requires a knowledge of the localized temperature history and how resist properties are impacted by elevated temperatures. Computer simulations of electron beam patterning of an optical mask can address the temperature history of the localized heating not possible through experimentation. Presented are the results of a study to determine the feasibility of using finite element (FE) analysis to predict these thermal effects. Two models were created to demonstrate its capabilities. The first shows that FE modeling is capable of high spatial resolution temperature profiles. The second demonstrates that FE models can be programmed to run complete patterning simulations.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander C. Wei, Alexander C. Wei, William A. Beckman, William A. Beckman, Roxann L. Engelstad, Roxann L. Engelstad, John W. Mitchell, John W. Mitchell, Thanh N. Phung, Thanh N. Phung, Jun-Fei Zheng, Jun-Fei Zheng, } "Localized resist heating due to electron-beam patterning during photomask fabrication", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410727; https://doi.org/10.1117/12.410727

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