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22 January 2001 Management of pattern generation system based on i-line stepper
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Abstract
A Device mask of 180nm generation was fabricated by Photomask Repeater system and the performance of it proved to be high by the results of fabricated mask. Great margins between the results of the fabricated mask and specifications suggest that lower graded masks can be used as master masks. From this point of view, error budgets were estimated about CD uniformity and pattern placement. The required specifications for master mask were estimated for 180nm and 130nm lithography. In CD uniformity the specification is 50nm(3?) for 180nm and 30nm(3?) for 130nm lithography. In pattern placement the specification is 75nm(3?) for 180nm and 50nm(3?) for 130nm lithography. In defect size the specification is lOOOnm for 180nm and 900nm for 130nm lithography. The requirements of master mask are rather rough even for 130nm lithography and enough realistic.
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Suigen Kyoh, Satoshi Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, and Toshikazu Umatate "Management of pattern generation system based on i-line stepper", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410728
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