22 January 2001 Materials for an attenuated phase-shifting mask in 157-nm lithography
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Abstract
We have investigated new materials for 157nm attenuated phase-shifting mask (Att-PSM). The structure of the Att-PSM is based on the bi-layer film in which a transparent film (TF) is deposited on an absorptive film (AF) on quartz substrate. We evaluated the optical property and the durability against F2 laser irradiation for 157nm Att-PSM materials, for which we prepared the modified ZrSixOy films and SiOx film as a TF and the Cr film and the modified ZrSixOy films as an AF. For a TF, the SiOx and modified ZrSixOy films achieve high transparency and robust durability against F2 laser light. For an AF, the Cr film achieves robust irradiation durability. Furthermore, we investigated the feasibility of defect inspection in consideration of the various combinations of TF and AF. From the calculation of the transmittance at inspection wavelength (193nm and 248nm), it is expected that the defect inspection is feasible in the combination of the SiOx or ZrSixOy transparent films with any absorptive film.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Matsuo, Takahiro Matsuo, Toshio Onodera, Toshio Onodera, Toshiro Itani, Toshiro Itani, Hiroaki Morimoto, Hiroaki Morimoto, Takashi Haraguchi, Takashi Haraguchi, Koichiro Kanayama, Koichiro Kanayama, Tadashi Matsuo, Tadashi Matsuo, Masao Otaki, Masao Otaki, } "Materials for an attenuated phase-shifting mask in 157-nm lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410703; https://doi.org/10.1117/12.410703
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