22 January 2001 Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III
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Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001); doi: 10.1117/12.410745
Event: Photomask Technology, 2000, Monterey, CA, United States
Abstract
The use of Plasma Etch for the fabrication of Binary Cr Photomasks has become a mainstream staple for advanced Reticle fabrication. These Binary Cr Reticles are suitable for the 0.18 micron technology Nodes and beyond and have forced an appreciation of the varying exposed Cr loads of different Mask layers.
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Chris Constantine, Russell J. Westerman, Jason Plumhoff, "Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410745; https://doi.org/10.1117/12.410745
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KEYWORDS
Chromium

Etching

Plasma

Plasma etching

Photomasks

Binary data

Data modeling

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