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22 January 2001 Printing 0.13-μm contact holes using 193-nm attenuated phase-shifting masks
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Abstract
We investigate the performance of nominally 6% attenuated phase shifting masks (AttPSM) for 193nm in printing 0. 13?m contact holes using a variety of shifter materials. Imaging performance of AttPSMs with various shifter materials, transmission, and side wall angles is presented and compared. Aerial images from binary and phase-shifting masks are analyzed by a 193nm aerial image acquisition tool to distinguish the contribution of the mask from that of the resist process. Compared to binary masks, AttPSMs are capable of printing 0.13?m contact holes with twice the DOR Our results indicate that 193nm AttPSM holds promise for patterning contact hole in the manufacturing of next generation logic devices.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun-Ming Albert Wang, Shy-Jay Lin, Chia-Hui Lin, Yao Ching Ku, and Anthony Yen "Printing 0.13-μm contact holes using 193-nm attenuated phase-shifting masks", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410704
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