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22 January 2001 Technological challenges in implementation of alternating phase-shift mask
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Abstract
Alternating Phase Shift Mask (APSM) reticles is critical to achieve sub 0.1 um poly gate lithography. Intrinsic APSM image inbalance can be resolved with various methods such as isotropic etch and aperture sizing, where positional line-shift can be reduced to within 5nm of final CD target. Defect reduction of APSM fabrication is addressed with multiple-option strategy to achieve high manufacturing yield. After Develop Inspection (ADI) capability was demonstrated with partial and complete missing 180 deg apertures, detected at post-develop with correlation to Qz defect after dry etch. Feasibility of APSM inspection and repair was demonstrated with existing toolsets and critical gap versus APSM defect specification remained to be bridged.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilman Tsai, Qi-De Qian, Ken Mr. Buckmann, Wen-Hao Cheng, Long He, Brian Irvine, Marilyn Kamna, Yulia O. Korobko, Michael Kovalchick, Steven M. Labovitz, R. Talevi, and Jeff N. Farnsworth "Technological challenges in implementation of alternating phase-shift mask", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410720
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